The chemisorbed species, ?, gave a Cls peak at 284.5 eV and an N1s peak at 397.7 eV, being shifted by -1.4 and -2.5 eV from those of condensed C 6H 5CN. The C 6H 5CN molecule chemisorbed on Ni(111) at 220 K by rehybridizing the nitrile group but not with the aromatic ring. The species gave a C1s peak at ≈ 286.0 eV and an N1s peak at 399.6 eV.
Small amounts of CH 3CN persisted up to 270 K as the species bonding through nitrogen lone-pair electrons. The chemisorbed species, ?, gave a C1s peak at 284.6 eV and an N1s peak at 397.7 eV, showing large shifts, -2.3 and -2.5 eV, from those of condensed CH 3CN. At 150 K the CH 3CN molecule strongly rehybridized to chemisorb on Ni(111) by di-σ bonds with carbon and nitrogen atoms. (eds.) Surfaces, Inhibition and Passivation, p 323.Adsorption of CH 3CN and C 6H 5CN on the Ni(111) surface has been studied by XPS as a function of the substrate temperature.
The XPS parameters are presented in Table 1. 12 (2010)Ĭlayton, C.R., Rosenzweig, L., Oversluizen, M.: Y. 2d), the intermediate binding energy peak N(2) at 399.3 eV of relative intensitie 42 corresponds to nitrogen bonded essentially to cobalt under the form of an NH which is incorporated in the electrodeposited film. Tanase, S.I., Tanase, D., Pascariu, P., Vlad, L., Sandu, A.V., Georgescu, V.: Mater. Gang, Wu, Li, N., Zhou, D., Mitsuo, K.: Surf. Golodnitsky, D., Rosenberg, Y., Ulus, A.: Electrochimica Acta 47 (2002) Sassi, W., Dhouibi, L., Berçot, P., Rezrazi, M., Triki, E.: Electrochimica Acta 117 (2014) Szmaja, W., Kozłowski, W., Polański, K., Balcerski, J., Cichomski, M., Grobelny, J., Zieliński, M., Miėkoś, E.: Mater. The smallest FWHM for pure Silicon (Siº) is 0.34 eV for the Si (2p3) peak when the Pass.
Pauleau, Y., Kukielka, S., Gulbinski, W., Ortega, L., Dub, S.N.: J. The FWHM for the symmetrical metal peak of most pure metals or elements is <1.0 eV and >0.3 eV (see Crist FWHM and BE Table for Pure Element) The smallest FWHM for a pure metal, by a stand-alone monochromatic XPS system, is 0.32 eV for the Re (4f7) peak.Luo, J.K., Pritschow, M., Flewitt, A.J., Spearing, S.M., Fleck, N.A., Milne, W.I.: J. Sverdlov, Y., Rosenberg, Y., Rozenberg, Y.I., Zmood, R., Erlich, R., Natan, S., Shacham-Diamand, Y.: Microelectron. Tanase, S.I., Pinzaru (Tanase), D., Dobromir, M., Georgescu, V.: Appl. Garcia-Torres, J., Vallés, E., Gómez, E.: Mater. Tanase, S.I., Pinzaru (Tanase), D., Pascariu, P., Dobromir, M., Sandu, A.V., Georgescu, V.: Mater. Jesche, A., Gorbunoff, A., Mensch, A., Stöcker, H., Levin, A.A., Meyer, D.C.: J. They could be useful for technological applications in electronics. Interfacial complexities of a ferromagnetic metal/oxide interface in studied thin films could force the interfacial spins to align ferromagnetically or antiferromagnetically. We suppose that the shape of the magnetoresistance curves is influenced by the interaction between the magnetic moment of the neighboring Co or Ni grains (with ferromagnetic behavior) separated by the nonmagnetic regions. Incorporation of a small amount of nitrogen into electrodeposited films increases the magnetoresistance up to 0.21 % for Co–N thin films and respectively 0.65 % in the case of Ni–N films. The presence of nitrogen in the electrodeposited films have a significant influence on the morphology and magnetoresistance of electrodeposited films. Scanning electron microscopy, X-ray photoelectron spectroscopy, and magnetoresistance measurements were utilized to characterize the studied films. The films were compared with similar samples obtained in the absences of nitrogen impurities. The films were electroplated onto aluminum substrates, at room temperature, using the same electrodeposition parameters (pH = 3 and temperature 30 ∘C) for all experiments. The effect was investigated of nitrogen impurities on the morphology and magnetoresistance properties of Co–N and Ni–N thin films.